newAD2: model OTF

structural parameters:
df = 400 : d<sub>f</sub> : [10,2000] nm

media:
cSi = Universal:c-Si
SiO2 = Sellmeier
a = Vacuum

boundary systems:
M = B(a,SiO2)*T(SiO2,df)*B(SiO2,cSi)

sample measurements:
R = Surface(M)

functions:
R-UVV = M00(R)
n,k-cSi = OC(cSi)
n,k-SiO2 = OC(SiO2)

modeled functions:
n,k-cSi(E=1~6.5:651)
n,k-SiO2(E=1~6.5:651)
