Crystalline silicon (c-Si)
modelname
c-SiCrystalline silicon model, with temperature dependence and dependence on concentration of oxygen, carbon and phosphorus admixture.
attributes
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O- parameters of concentration of oxygenfOand fraction of precipitated formfOpare generated. -
C- parameter of concentration of carbonfCis generated. -
P- parameter of concentration of phosphorusfPis generated. -
B- parameter of concentration of boronfBis generated.
auxiliary attributes
The following attributes are not meant for everyday model configuration. They mainly allow individual physical contributions to be extracted from the model separately – typically for generating figures showing these contributions on their own.
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off-1ph/on-1ph,off-2ph/on-2ph,off-3ph/on-3ph,off-4ph/on-4ph- switches individual phonon bands on/off (default is on). -
off-ph- switches off all four phonon bands at once. -
off-fc/on-fc- switches the free-carrier contribution on/off (default is on). -
off-ut/on-ut- switches the Urbach tail on/off (default is on). -
off-idt/on-idt- switches indirect transitions on/off (default is on). -
off-dt/on-dt- switches all six direct-transition bands on/off at once (default is on); individual bands can be switched on separately withon-dt1throughon-dt6, but can only be switched off all at once withoff-dt. -
off-he/on-he- switches high-energy transitions on/off (default is on). -
off-ce/on-ce- switches core-electron excitations on/off (default is on). -
off-ee- switches off all electronic-excitation contributions at once (free carriers, Urbach tail, indirect and direct transitions, high-energy transitions and core-electron excitations). -
Gauss/num- selects the integration method used when calculating the individual contributions –Gauss(default) is the analytic method used in [10],numis the numerical (integral) method used in [9]. -
static- exposes the model's static (internal) parameters, which the ordinary user normally does not need to see, as regular fittable parameters; used when constructing advanced models.
Settings
The c-Si model registers one setting of its own, changeable with the let command in text mode or in the graphical interface's Settings window:
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let precision_cSi = value– precision of the model's internal integrals, an integer in the range[3,9](5by default).
Example
media: f = c-Si:O:C:P
newAD2> par fOs = 0 fixed [0,1000) ppm fOps = 0 fixed [0,100] % fCs = 0 fixed [0,1000) ppm fPs = 0 fixed [0,1e4) ppm newAD2>
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